ZXM61P03F 30v p-channel enhancement mode mosfet summary v (br)dss =-30v; r ds(on) =0.35 ; i d =-1.1a description this new generation of high density mosfets from ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control ordering information device reel size (inches) tape width (mm) quantity per reel ZXM61P03Fta 7 8 embossed 3,000 ZXM61P03Ftc 13 8 embossed 10,000 device marking p03 sot23 pin out top view product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
ZXM61P03F thermal resistance parameter symbol value unit junction to ambient (a) r ja 200 c/w junction to ambient (b) r ja 155 c/w notes: (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. absolute maximum ratings parameter symbol limit unit drain-source voltage v dss -30 v gate- source voltage v gs 20 v continuous drain current (v gs =-10v; t a =25c)(b) (v gs =-10v; t a =70c)(b) i d -1.1 -0.9 a pulsed drain current (c) i dm -4.3 a continuous source current (body diode)(b) i s -0.88 a pulsed source current (body diode)(c) i sm -4.3 a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
ZXM61P03F electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss -30 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -1 a v ds =-30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.35 0.55 ? ? v gs =-10v, i d =-0.6a v gs =-4.5v, i d =-0.3a forward transconductance (3) g fs 0.44 s v ds =-10v,i d =-0.3a dynamic (3) input capacitance c iss 140 pf v ds =-25 v, v gs =0v, f=1mhz output capacitance c oss 45 pf reverse transfer capacitance c rss 20 pf switching (2) (3) turn-on delay time t d(on) 1.9 ns v dd =-15v, i d =-0.6a r g =6.2 ? ,r d =25 ? (refer to test circuit) rise time t r 2.9 ns turn-off delay time t d(off) 8.9 ns fall time t f 5.0 ns total gate charge q g 4.8 nc v ds =-24v,v gs =-10v, i d =-0.6a (refer to test circuit) gate-source charge q gs 0.62 nc gate drain charge q gd 1.3 nc source-drain diode diode forward voltage (1) v sd -0.95 v t j =25c, i s =-0.6a, v gs =0v reverse recovery time (3) t rr 14.8 ns t j =25c, i f =-0.6a, di/dt= 100a/ s reverse recovery charge(3) q rr 7.7 nc notes: (1) measured under pulsed conditions. width=300 s. duty cycle 2%. (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
|